A test structure of the photodetector with a mesa size of 300 μ m × 300 μ m is also made in order to obtain the device parameters. 为得到器件参数,设计制作了台面尺寸为300μm×300μm的大面积测试器件;
The new planar devices using oxygen implantation are developed. Submicron gate lengths have been fabricated, by using conventional compensated contact photolithography. The microwave noise of the resulted device is much lower than that of the general mesa device. 提出了氧离子注入的新型平面器件结构,用普通接触式补偿光刻法制作了亚微米栅条,所得器件比普通台式器件具有更低的微波噪声。